During the industrial exhibition dates from Tuesday to Thursday, you may find us on the right side of the hall on Booth #55
Detector Materials Growth and Characterization I
RTSD-08-06, Wednesday, 5 November at 15:15 (Room G304)
Development and Characterization of X-Ray Sensors Based on Cr-Compensated GaAs, (#3116)
D. Nalyvaiko, J. Kalliopuska, S. Vähänen, V. Gnatyuk
GaAs and GaN Detectors
RTSD-10-02, Thursday, 6 November at 8:15 (Room 304)
Evaluation of Different Thicknesses of Chromium Compensated Gallium Arsenide Sensors Using Photon Counting Readout Electronics, (#1859)
J. Kalliopuska, D. Nalyvaiko, V. Gnatyuk, S. Vähänen, et al.
RTSD-10-03, Thursday, 6 November at 8:30 (Room 304)
Characterization of Cr-Compensated GaAs Crystals Using Alpha Particle Spectra, (#1859)
V. Gnatyuk, J. Kalliopuska, D. Nalyvaiko, S. Vähänen
Our project collaborators will also present joint results co-authored by Dr. Juha Kalliopuska.
RTSD-10-04, Thursday, 6 November at 8:45 (Room 304)
Simulation of Deep Level Effects on GaAs Detector Under Clinical Flux, (#2295)
B. Wang, H. Li, Y. Yang, T. Zhong, J. Kalliopuska, X. Lai
RTSD-05 Poster Session
R-05-387, Tuesday, 4 November at 16:00-18:00 (Room G4 & G6)
Carrier Transport Characterization and Surface Defect Impacts in GaAs:Cr Photon-Counting Detectors, (#3026)
Y. Yang, H. Li, B. Wang, T. Zhong, J. Kalliopuska, X. Lai
The presentations report on the recent results on the preparation and characterization of detector grade Cr-compensated GaAs wafers, as well as the development and testing of imaging sensors. The presentations on Advafab’ GaAs sensors summarize the results obtained from the contributing authors on detection efficiency uniformity, stability, and spectral resolution. In addition, the presentations focus on the creation of thick (up to 2 mm) sensors capable of operating at high photon fluxes (up to 1.2 Gcnt/s/mm2) using different readout electronics
The detailed timetable of the workshop can be found here
